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NDF04N62Z, NDD04N62Z
THERMAL RESISTANCE
Parameter
Symbol
Value
Unit
Junction ? to ? Case (Drain)
Junction ? to ? Ambient Steady State
NDF04N62Z
NDD04N62Z
(Note 4) NDF04N62Z
(Note 1) NDD04N62Z
R q JC
R q JA
4.4
1.5
50
38
° C/W
(Note 4) NDD04N62Z ? 1
ELECTRICAL CHARACTERISTIC S (T J = 25 ° C unless otherwise noted)
80
Characteristic
Test Conditions
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
V GS = 0 V, I D = 1 mA
Reference to 25 ° C,
I D = 1 mA
BV DSS
D BV DSS /
D T J
620
0.6
V
V/ ° C
Drain ? to ? Source Leakage Current
Gate ? to ? Source Forward Leakage
V DS = 620 V, V GS = 0 V
V GS = ± 20 V
25 ° C
125 ° C
I DSS
I GSS
1
50
± 10
m A
m A
ON CHARACTERISTICS (Note 5)
Static Drain ? to ? Source
On ? Resistance
Gate Threshold Voltage
Forward Transconductance
V GS = 10 V, I D = 2.0 A
V DS = V GS , I D = 50 m A
V DS = 15 V, I D = 2.0 A
R DS(on)
V GS(th)
g FS
3.0
1.8
3.3
2.0
4.5
W
V
S
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain (“Miller”) Charge
Plateau Voltage
Gate Resistance
V DS = 25 V, V GS = 0 V,
f = 1.0 MHz
V DD = 310 V, I D = 4.0 A,
V GS = 10 V
C iss
C oss
C rss
Q g
Q gs
Q gd
V GP
R g
535
62
14
19
3.9
10
6.4
4.7
pF
nC
V
W
RESISTIVE SWITCHING CHARACTERISTICS
Turn ? On Delay Time
t d(on)
12
ns
Rise Time
Turn ? Off Delay Time
Fall Time
V DD = 310 V, I D = 4.0 A,
V GS = 10 V, R G = 5 Ω
t r
t d(off)
t f
13
25
14
SOURCE ? DRAIN DIODE CHARACTERISTICS (T C = 25 ° C unless otherwise noted)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I S = 4.0 A, V GS = 0 V
V GS = 0 V, V DD = 30 V
I S = 4.0 A, di/dt = 100 A/ m s
V SD
t rr
Q rr
285
1.3
1.6
V
ns
m C
4. Insertion mounted
5. Pulse Width ≤ 380 m s, Duty Cycle ≤ 2%.
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